STD5NE10 n - channel 100v - 0.32 w - 5a to-251/to-252 stripfet ? power mosfet n typical r ds(on) = 0.32 w n exceptional dv/dt capability n avalanche tested n 100% avalanche tested n application oriented characterization n add suffix "t4" for ordering in tape & reel description this power mosfet is the latest development of stmicroelectronics unique "single feature size ? " strip-based process. the resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications n motor control (disk drives, etc.) n dc-dc & dc-ac converters n synchronous rectification ? internal schematic diagram may 1999 3 2 1 ipak to-251 (suffix "-1") 1 3 dpak to-252 (suffix "t4") absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 100 v v dgr drain- gate voltage (r gs = 20 k w )100v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c5a i d drain current (continuous) at t c = 100 o c3.5a i dm ( ) drain current (pulsed) 20 a p tot total dissipation at t c = 25 o c25w derating factor 0.17 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 0.6 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 5a, di/dt 200 a/ m s, v dd v (br)dss , tj t jmax type v dss r ds(on) i d STD5NE10 100 v < 0.4 w 5 a 1/9
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 6 100 1.5 275 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 30v) 25 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a234v r ds(on) static drain-source on resistance v gs = 10v i d = 2.5 a 0.32 0.4 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 5a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 2.5 a 2.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 305 45 21 pf pf pf STD5NE10 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 50 v i d = 3.5 a r g = 4.7 w v gs = 10 v (resistive load, see fig. 3) 6.5 15 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 80 v i d = 5 a v gs = 10 v 14 6 4 18 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 50 v i d = 3.5 a r g = 4.7 w v gs = 10 v (resistive load, see fig. 3) 25 7 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 80 v i d = 7 a r g = 4.7 w v gs = 10 v (inductive load, see fig. 5) 7 8 16 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 5 20 a a v sd ( * ) forward on voltage i sd = 8 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a di/dt = 100 a/ m s v dd = 50 v t j = 150 o c (see test circuit, fig. 5) 75 210 5.5 ns nc a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area for thermal impedance STD5NE10 3/9
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STD5NE10 4/9
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STD5NE10 5/9
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STD5NE10 6/9
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e STD5NE10 7/9
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 1 3 == b e == b2 g 2 a c2 c h a1 detail "a" a2 detail "a" to-252 (dpak) mechanical data 0068772-b STD5NE10 8/9
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com . STD5NE10 9/9
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